Abstract
High-resistivity CdTe crystals were grown from Te-rich solution doped with Cl by the temperature gradient solution growth (TGSG) method. The room-temperature resistivity of the undoped crystals was about 10 3 Ω cm, and rose abruptly to > 10 9 Ω cm for a doping concentration of Cl ranging from 500 to 5000 ppm. The mobility—lifetime ( μτ) product for both electrons and holes decreased with increasing Cl concentration. The best μτ values of 7.22 × 10 −4 cm 2 V −1 for electrons and 6.24 × 10 −5 cm 2 V −1 for holes were obtained at a Cl concentration of 500 ppm. The quality of the crystals was characterized by means of Fourier-transform infrared spectroscopy, photoluminescence analysis and γ-ray detection test. γ-ray detectors with a size of 3 × 3 × 1 mm 3, fabricated from high resistivity TGSG crystals, showed energy resolutions (FWHM) of 6.9 keV for 122 keV γ-rays from 57Co and 22.4 keV for 662 keV γ-rays from 137Cs.
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