Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack

Su-Keun Eom,Ho-Young Cha,Min-Woo Kong,Kwang-Seok Seo

doi:10.1109/jeds.2019.2934745

Abstract

In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL deposition to passivate the InGaAs surface, excellent sub-threshold characteristics (SSmin = 68 mV/dec) were achieved through the proposed gate stack technology. We performed positive-bias-temperature-instability (PBTI) measure -ments in order to ensure a reliable gate operation. The proposed bi-layer III-V gate stack achieved the excellent value of maximum gate overdrive voltage (VOV, max) of 0.49 V with CET = 1.04 nm. The proposed gate stack has a great potential for III-V MOSFET technology to low power logic applications.

Highlights

Though the traditional physical scaling of advanced metaloxide semiconductor field-effect transistors (MOSFETs) in conjunction with Dennard’s scaling rules has become very challenging [1], various technologies have been introduced to enable the pursuit of the scaling roadmap [1]–[4]
The ID-VG transfer characteristics of Indium gallium arsenide (InGaAs) QW MOSFETs are shown in Fig. 2 for all the samples
Slight off-current degradation occurred for the single-layer IPA-based plasma-assisted atomic -layer-deposition (PA-ALD) HfOxNy gate dielectric due to the gate leakage increase

Summary

Introduction

Though the traditional physical scaling of advanced metaloxide semiconductor field-effect transistors (MOSFETs) in conjunction with Dennard’s scaling rules has become very challenging [1], various technologies have been introduced to enable the pursuit of the scaling roadmap [1]–[4]. INDEX TERMS Indium gallium arsenide (InGaAs), III-V MOSFET, high-k gate dielectric, hafnium oxynitride (HfOxNy), PBTI reliability. Our previous work demonstrated the excellent interface characteristics with the optimized plasma-assisted atomic -layer-deposition (PA-ALD) HfOxNy process [11]. Noticeable trade-off relationships in terms of bulk and interface quality existed between the O3 and Isopropylalcohol (IPA) based HfOxNy. In order to achieve a reliable gate stack, we need to compromise the trade-off relationship in the HfOxNy processes.

Results

Conclusion