Characterization of high-dose implants of Co and Cr in Si by RBS

Abstract

Single crystal Si wafers implanted at high doses with Cr or Co at 300 keV, with nominal values ranging from 4.5 to 144×10 15 atoms cm −2, were prepared in order to study their potential use as standards for Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS). These samples were calibrated by comparison with primary standards, normally referred to as Harwell II series Bi in Si, using Rutherford backscattering spectrometry (RBS). The estimated inaccuracy of the implantation dose measurements of Cr and Co is about 5%. The shape and range of the implantation were determined by RBS measurements with the help of the simulation code RUMP. The profile of the implantation is in all cases very well reproduced by simulation with a joint half-Gaussian distribution where the half width at the half maximum (HWHM) ascribable to the tail deeper in the sample is always lower than the one closer to the surface.