Abstract
The comparative analysis of the structural, morphological, and local electrical properties of CVD graphene films synthesized at atmospheric and low pressure CVD growth conditions was carried out. The use of electrical techniques of scanning probe microscopy, such as Kelvin probe force microscopy, scanning capacitance microscopy, electrostatic force microscopy, and conductive atomic-force microscopy for investigation of heterogeneous graphene coverage was discussed. A significant change in the surface potential values was observed indicating the formation of p-type multilayered graphene domains on single layer graphene at low pressure and n-type multilayered graphene films at atmospheric pressure CVD. The effect of Ar flow rate increasing during cooling stage in the temperature range of 700–200 °C causing graphite formation was described. The employment of surface potential spectroscopy allows to indicate the presence of nonlinear phenomena in heterogeneous graphene.
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