Abstract
6-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor phase epitaxy (OMVPE) technique are being developed for light emitting diodes (LEDs) applications. Defects such as dislocations and inclusions have been characterized by synchrotron X-ray topography. Burgers vector and line direction of the dislocations were determined by ray-tracing simulation. Moreover, epilayer surface of the samples grown under higher pressure reveals a hazy morphology, which is rougher compared to regular clear regions. Synchrotron X-ray topographs of the hazy regions showed blurred contrast, indicating disordered lattice arrangement. Internal structure of the hazy regions was studied by reciprocal space mapping (RSM), where weakened and broadened peaks around the clear epilayer peak were observed using 004 reflection, indicating continuously varying strain and tilt between the hazy region and the clear region.
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