Abstract
We have developed a fabrication process for isolated quantum wire structures, using advanced atomic layer epitaxy (ALE) techniques based on the self-limiting effect. We describe several advantages of the self-limiting effect for the fabrication process of quantum nanostructures. We also present characterizations of the quantum wire structures including photoluminescence (PL) measurements. Due to the fact that the ALE is localized on a nanometer scale and that a growth mode switching technique between isotropic and anisotropic ALE was used, well-defined GaAs quantum wires with structure control were successfully realized. Also, quantum confinement effects of one-dimensional systems have been observed clearly in the quantum wires via PL measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.