Abstract
ABSTRACTA UHV MBE apparatus in which the deposition of both group IV and group III-V components is possible without breaking vacuum has been utilized to compare the growth of GaAs epilayers on non-polar Si(100) and Ge coated Si(100) substrates. In addition, a comparison of GaAs epilayers grown on substrates cleaned by ex-situ techniques and on substrates given all UHV in-situ surface preparation was made. Defect reduction by the incorporation of strained-layer superlattice dislocation filters and by post-growth rapid thermal anneal (RTA) thermal cycles was also investigated. Optical and material properties comparable to MBE grown GaAs/GaAs were obtained for GaAs grown on Ge coated Si(100) substrates.
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