Abstract
The most important of the GaAs surfaces for technological applications are those found on the (100) orientation, which are usually prepared by molecular beam epitaxy (MBE). However, when MBE facilities are not available an alternative method of surface preparation is by simultaneous ion bombardment and annealing cycles (SIBA), which it is known to give good results on the (111) polar faces. On (100) surfaces this treatment produces the 1 × 6, 4 × 1, and c(8 × 2) Ga-rich surface reconstructions, which we have attained sequentially for decreasing As surface concentrations. The experimental As to Ga Auger ratios of the different structures have been associated with the results given by an Auger formalism which is able to predict the surface composition of the outermost bilayer. Our results for the different surface compositions are compared with all the data available in the literature for surfaces prepared by SIBA.
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