Abstract
Infrared reflectivity measurement are made on Ga 0.70 In 0.60 Sb, thin layers grown on semi-insulating GaAs substrate with free-carrier density varying from 10 17 cm -3 , to 10 18 cm -3 . Electrical and optical parameters of the layers are determined simultaneously by fitting appropriate theoretical model with experimental data. Densities and mobilities obtained are of the order of the ones given by Hall measurements and optical parameters are in good agreement with those given in the literature
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