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Abstract
CuInSe 2 CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J− V characteristics of the devices prepared with different thicknesses of CdS and CuInSe 2 were studied. The typical solar cell parameters obtained for the best cell are: V oc = 365 mV, J sc = 12 mA/cm 2, FF = 61%, and η = 3.1% under an illumination of 85 mW/cm 2 on a cell of active area 0.1 cm 2. The J− V and C− V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7.
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