Abstract
Kato's statistical theory of X-ray dynamical diffraction was generalized to the case of diffraction by epitaxial layers and was applied to analyze the X-ray double crystal rocking curves of In x Ga 1−x As InP single epilayers in this paper. It is shown that the statistical theory provides us with quantitative information about the perfectness as well as thicknesses and compositions of the epilayer. Moreover, some confusing experimental values can be interpreted by taking into account the effect of diffuse scattering. The statistical theory can help us to obtain much more information which is significant for improving the quality of the epilayer through optimizing the growth conditions.
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