Characterization of field effect transistor with TiO2 nanotube channel fabricated by dielectrophoresis

Abstract

Field effect transistor with TiO2 nanotube channel was fabricated by dielectrophoresis. Although TiO2 nanotube channel is not formed at 10 MHz of the dielectrophoresis, the channel is formed at 100 kHz. It is suggested that migration distance is not enough at 10MHz. The drain current-drain voltage characteristics of the transistor and the temperature dependence indicate that the electric transport is dominated by double Schottky barrier.