Abstract
Polarization fatigue mechanism in organic ferroelectrics, structures at interface between ferroelectric vinylidene fluoride oligomer and Al electrode under the repeated polarization switching process were investigated by high-resolution X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR). Al 2O 3 layer at interface was formed with increasing the number of polarization reversal. The formation of oxide layer will be strongly related to polarization reversal, thus the repeated charge and discharge process by polarization reversal may promote the oxidation of Al electrode. Furthermore, the structural and orientation changes in ferroelectric molecular films by applying the electric field were observed. The formation of Al 2O 3 layer, as well as the structural changes in thin films, is affected to polarization fatigue process of ferroelectric organic devices.
Published Version
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