Abstract
For HfSiON/SiO2 n-type and p-type MOSFETs with a channel length L = 64 nm, the fast relaxation effect of oxide-trapped charges Qox during interrupt for bias temperature instability (BTI) degradation measurement were investigated, and a model that compensated for this effect to predict lifetime tL was proposed. Experimental results show that the fast relaxation of Qox during threshold-voltage Vth measurement rapidly saturates within 1 s and is exponentially increasing for gate stress voltage Vg,str and exponentially decreasing for measurement duration tm but does not affect the BTI degradation mechanism. Using the Vg,str and tm dependence of Qox’s fast relaxation under BTI stress, tL prediction model was proposed to compensate the recovery effect by Vth measurement from BTI degradation measured in slow measurement (SM) condition with tm > 1 μs. The proposed model increases the precision of the estimate of tL by considering the recovery effect of Qox even in SM.
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