Abstract

In this paper, the total ionizing dose effects on electrostatic discharge (ESD) protection devices are investigated. Irradiation is conducted with 1.5 MeV He+ from a RPEA 4.0 MV Dynamitron accelerator, and the Barth 4002 transmission line pulse (TLP) tester is used for measurements. The ESD devices considered are a P+/NW diode, a Zener diode, gate grounded NMOS (GGNMOS), and lateral silicon controlled rectifiers (LSCR) fabricated in a 0.35 um BCD (Bipolar-CMOS-DMOS) technology. The pre- and post-irradiated TLP I-V characteristics are analyzed and compared in detail. Significant degradation in ESD protection is observed after exposure of devices to ionizing irradiation.

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