Abstract
Polycrystalline TiO2 film with the thickness of 4nm prepared by atomic layer deposition (ALD) on ammonium sulfide treated p-type InP shows a good interface quality but with slightly higher leakage current mainly resulted from the thermionic emission and grain boundary. Stacked with a high band-gap amorphous Al2O3 of 3nm prepared by atomic layer deposition on TiO2, the leakage currents are improved to 1.9×10−8 and 1.1×10−6A/cm2 at±2MV/cm. The equivalent dielectric constant of Al2O3/TiO2 is about 18. The lowest interface state density is around 5.7×1011cm−2eV−1. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 135mS/mm and electron channel mobility of 275cm2/Vs.
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