Abstract
In this study, an enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) using N2O plasma oxidation process has been performed. Before the gate metal deposition, the AlGaN barrier layer was treated by 135 W N2O plasma for 240 s. The surface native oxide of AlGaN was removed and a 4 nm high quality Ga2O3/Al2O3 compound insulator was simultaneously formed. The threshold voltage of conventional depletion-mode (D-mode) GaN HEMT was −3.6 V and this value can be shifted to +0.17 after N2O plasma oxidation treatment beneath the gate metal. This 4 nm Ga2O3/Al2O3 compound insulator oxidized by N2O can suppress the polarization charge density for E-mode operation of gate terminal and the gate leakage was also reduced simultaneously.
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