Abstract
The effects of epitaxial regrowth on the electrical and optical properties of semiconductor lasers are investigated. Threshold current density and differential quantum efficiency versus cavity length for several companion uninterrupted and regrown structures are analyzed self-consistently to separately quantify the electrical and optical properties of the epitaxial regrowth interface and the initial regrown material. A reduction in internal quantum efficiency for regrown lasers indicates increased nonradiative carrier recombination at the regrowth interface. Increases in the internal loss indicate increased photon absorption in the initial regrown material.
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