Abstract
ABSTRACTWe have grown doped diamondlike carbon (DLC) thin films on Ni and Si substrates by mass separated low energy ion beam deposition. The current-voltage characteristics of these films and also a P-doped DLC / B-doped DLC diode-like device were measured. Doped DLC films show a higher electrical conductivity, which we interpret by hopping conductivity due to an increased density of localized states rather than a shift of the Fermi level. We also present first results on doping modulated DLC multilayers deposited on Si substrates. The dopant concentration profiles were analyzed by Rutherford Backscattering for63Cu dopant atoms and by neutron depth profiling for a10B doped multilayer.
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