Abstract
This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diode. A high reverse leakage current of −0.98 μA was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈12〉 from the g·b invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.
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