Abstract
The behavior of vacancy-type defects and displaced Si atoms in Si(100) caused by self-ion implantation has been investigated by variable-energy positron annihilation spectroscopy and Rutherford backscattering spectroscopy/channeling. It is found that the recovery process of the defects strongly depends on the morphology of the implanted region. The divacancies produced by an implantation of 2×1014Si+⋅cm−2, which is less than the critical value required for amorphization, aggregate into large vacancy clusters by annealing at 300 °C. These vacancy clusters diffuse towards the surface at temperatures above 600 °C and anneal out at around 800 °C. The specimen implanted with 2×1015Si+⋅cm−2, in which a complete amorphization takes place in the damaged region, shows a different annealing characteristic. In the first stage (∼600 °C), the amorphous zone is transformed into crystalline material by solid phase epitaxial growth, although large vacancy clusters still remain. These agglomerate clusters continue to grow in a second annealing stage which takes place at around 700 °C. Annealing at 900 °C is required to eliminate these vacancy-type defects.
Published Version
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