Abstract
Cu2O thin film is a p-type oxide semiconductor which has a high absorption system, eco-friendly, resource-friendly material. So it can be used in various fields of optoelectronic devices such as solar cell absorption layers, water splitting device and photocathode materials of photovoltaic cells. The electrochemical deposition process of the Cu2O thin film that can be used as an optoelectronic device has advantages such as large-area deposition, precursor recycling function, low-cost process, and low-temperature deposition. This has industrial and economic competitiveness, which has a great advantage over conventional vacuum processing equipment. However, Cu2O thin films grown by using an electrochemical deposition method based on normal pressure and low temperature have lower conductivity than thin films grown by using a vacuum process. The efficiency of the device is inevitably lower than that of thin films based on vacuum process equipment because the electrons and holes cannot be effectively separated. In order to solve the conductivity problem of the thin film, various methods such as optimizing the deposition method and applying a post-deposition treatment process were conducted. The research team improved the mobility of the thin film in the (111) direction by dramatically inducing the preferential growth of the Cu2O thin film by adding Sb, which acts as a metal surfactant that can control the growth behavior. The charge separation was effectively confirmed by light in the Cu2O thin film. This study relates to the process of optimizing the conductivity of the Cu2O thin film by effectively controlling the molar concentration of Sb actually added in the Cu2O thin film. In the process of growing the Cu2O thin film by electrochemical deposition, Cu2O thin films were grown by adding Sb ions at concentrations of 1 mM, 2 mM, 3 mM, 4 mM, and 5 mM. In order to clearly confirm the effect of improving the Cu ion consumption rate due to the addition of Sb at the electrode, linear sweep voltammetry for each molar concentration of Sb was measured and compared. Then, the structural and electrical properties of the Cu2O thin film added with Sb were analyzed using X-ray diffraction, current-voltage, etc. After that, thin films according to the Sb molar concentration were analyzed by capacitance-voltage method and impedance spectroscopy as an electrochemical analysis method. By analyzing the carrier concentration and properties of the optimum conditions for Cu2O thin film growth were confirmed.
Published Version
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