Abstract
The properties of the defect level at 0.8eV above the valence band in Cu(In1−x,Gax)Se2 were studied by the two-wavelength excited photoluminescence (PL) method. The two-wavelength excited PL involves two different pumping light sources, that is, a 635nm diode laser used as an above-gap excitation and a 1550nm diode laser whose energy corresponds to the defect level resulting in having a role of charge saturation at the defect level. The intensity of the two-wavelength excited PL was stronger than that without 1550nm laser irradiation for all specimens at room temperature regardless of Ga concentration. The results suggest the 0.8eV defect level acts as recombination center at room temperature.
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