Abstract
AbstractIn this work, the temperature‐dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type‐I InAlAs/GaAsSb emitter–base junction interface and a type‐II GaAsSb/InP base–collector were studied. The experimental results reveal that electron injection at emitter–base junction could be affected by conduction barrier limited carrier transport. A conduction band edge discontinuity of 9.5 meV for InAlAs/GaAsSb heterojunction was experimentally estimated.
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