Abstract
In order to study the reactivity of Si Me interfaces, seven model thin-film systems with Me = Al, Ni, Co, Cr, Zr, Mo or W and with a total thickness between 110 and 200 nm were prepared by sputter deposition on smooth Si(111) substrates. The samples were heated using a linear temperature increase between room temperature and different higher temperatures (from 150 to 950 °C). The AES sputter depth profiles of as-deposited and heat treated samples allowed a quantitative determination of the change of the interface widths with temperature. The main moving elements in initial reaction stages and the effective chemical interdiffusivities at the Si Me interfaces were determined by the rate of change of the interface widths. The activation energies for the beginning interfacial reactions at different Si Me interfaces were obtained from Arrhenius plots and were found to be between 0.6 and 2.1 eV.
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