Abstract
Using x-ray photoelectron spectroscopy (XPS) and scanning Auger microprobe (SAM) techniques we have studied the stoichiometry and contamination of CdTe polycrystalline films grown by the hot wall close-spaced vapor transport technique. XPS and SAM analyses show that the density of impurities in the bulk of the films is <1018 cm−3. Cross sections of the CdTe films perpendicular to the surface–glass interface were exposed by cleaving in vacuum. SAM measurements on these surfaces show that small concentrations of C impurities appear on some regions and some others present only Cd and Te. Thus, we intend to show that films produced with this technique are reasonably free of bulk contamination.
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