Abstract
Investigations of 111mCd implanted GaAs and InP crystals using the microscopically sensitive perturbed angular correlation technique show that the implanted Cd is incorporated on unperturbed substitutional lattice sites during rapid thermal annealing at significant lower temperatures than for electrical activation is required. In GaAs the higher implantation temperature at 473 K did not show any influence on this annealing stage, whereas as higher implantation dose hinders the annealing. We conclude that not only the local environment of the implant but also the long-range lattice perfection has to be restored for the electrical activation of implants in III-V compound semiconductors.
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