Abstract
Thin films of copper indium gallium selenide (CIGS) designed for highly efficient solar cell material were investigated to characterize the two-dimensional carrier distribution using scanning capacitance microscopy (SCM). We optimized a preparation method of the cross-section samples and concluded that bevel polishing by 25° to 30° was effective for crumbly polycrystalline materials such as CIGS, so as to provide not the surface property of cracked crystalline grains but the cross-section property of individual cut grains. Because of improvement in this preparation procedure, changes in carrier distribution have been observed directly in the active CIGS layer before and after turning on a 100 W halogen lamp irradiation. A calibration curve between carrier concentration N and SCM's dC/dV signals was applied for qualitatively calculating relative values of N in CIGS. Increased carrier concentration peaks on the grains were estimated to become about three times as high as those with the light on.
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