Abstract
The electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been studied in order to investigate the electrical behavior of diamond-based electronic devices. The current–voltage ( I– V) characteristics of the Ni–Schottky contacts to the boron-doped homoepitaxial diamond film show excellent rectification properties. The capacitance–voltage ( C– V) features of the Ni/diamond Schottky diodes were characterized in the frequency range from 10 −3 to 2×10 5 Hz. The C– V measurements indicate that the space charge density ( N I) and built-in potential ( V d) values are approximately 6.0×10 16 cm −3 and 1.25 V, respectively, and show weak frequency dependence in the range from 10 −3 to 10 4 Hz. Capacitance–frequency measurement at zero bias indicated that the degrading capacitance at high frequency (>10 4 Hz) is primarily due to the high series resistance of the homoepitaxial diamond film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
