Abstract
Boron nitride films have been synthesized using the dual ion beam deposition technique. A bombarding beam of 5–100 keV N 2 + ions and a sputtering beam of 0.05–1.5 keV Ar + ions were employed. The boron atoms sputtered from the boron target by the Ar + ion beam were deposited onto the substrate of thermally oxidized silicon wafers which were bombarded by the N 2 + ion beam simultaneously during deposition. Infrared (IR) absorption spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness tests were used to study the properties of the resulting films. The IR spectra showed a clear and strong peak due to the cubic boron nitride phase together with two peaks of the hexagonal phase. The microhardness of the films is in excess of 4300 HV.
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