Abstract
Polycrystalline boron carbon nitride (BCN) films were synthesized at various temperatures by plasma-assisted chemical vapor deposition. X-Ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and transmission electron diffraction (TED) measurements were carried out to characterize the BCN films. Incorporation of C atoms increased with decreasing growth temperature. Moreover, a reduction in the crystal grain size and an increase of the amorphous region of the BCN film occurred with decreasing growth temperature. A variation in the dielectric constant of the BCN film was related to the C composition and film structure. A dielectric constant as low as 2.4 was achieved for the BCN film.
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