Abstract
High indium content blue-green (460–520 nm) m-plane InGaN light emitting diodes (LEDs) were grown on low defect-density m-plane GaN substrates. Systematic studies were performed on packaged blue-green LED lamps by using a range of well and barrier thicknesses. Photoluminance and electroluminance peak wavelengths increased while the well width was increased from 2 to 4 nm. The highest output power was achieved for well width of 2.5 nm. The output power improved significantly with the increase in barrier thickness. Nearly blueshift-free emission was observed in all LEDs from 1–400 A/cm2 current density under pulsed operation.
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