Abstract
Stacking faults in 4H-SiC epitaxial layers were investigated by micro-photoluminescence (PL) mapping at room temperature and by transmission electron microscopy (TEM) observation. Stacking faults with a peak emission wavelength of 420 nm were identified by the PL measurements with a He–Cd laser of 325 nm excitation wavelength. The shape of the stacking faults was revealed to be bar-shape by the micro-PL intensity mapping at emission wavelength of 420 nm. The stacking sequences of the bar-shaped stacking faults were determined as (...2, 3, 2...), (...2, 3, 3, 3, 2...), and (...2, 3, 3, 3, 3, 3, 2...) in the Zhdanov's notation by high-resolution TEM.
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