Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry

Abstract

Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication.