Abstract
The structural and luminescent properties of AlN:Mn films, which showed red-orange luminescence originated from the transition of 3d-electrons in a Mn ion, were investigated. The samples were grown on sapphire (0 0 0 1) wafers by an atmospheric-pressure metalorganic chemical vapor deposition at 1050 °C. The grown films were polycrystal oriented preferentially towards the 〈 0 0 0 1 〉 direction of wurtzite structure. It is suggested from the dependence of Mn concentration ( C Mn ) on the lattice constant and the low-temperature photoluminescence spectrum that most of the Mn atoms occupy the lattice sites for C Mn up to about 1 × 10 20 cm - 3 . The samples exhibited bright cathodoluminescence reflecting the improved crystalline quality compared to that of the low-temperature-grown samples. The highest luminance, 245 cd/m 2, has been obtained from the layer with C Mn of 3 × 10 19 cm - 3 under the excitation conditions of 5 kV and 0.1 mA/cm 2 as an accelerating voltage and a current density, respectively.
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