Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

Abstract

The absolute responsivity of a metal-semiconductor-metal (MSM) photodiode based on high quality AlN material has been tested from the vacuum ultraviolet (vuv) to the near UV wavelength range (44–360nm). The metal finger Schottky contacts have been processed to 2μm in width with spacing between the contacts of 4μm. In the vuv wavelength region, the measurement methodology is described in order to distinguish the contribution of the photoemission current from the internal diode signal. In the wavelength range of interest, AlN MSM is sensitive and stable under brief vuv irradiation. The MSM shows a 200∕360nm rejection ratio of more than four orders of magnitude and demonstrates the advantages of wide band gap material based detectors in terms of high rejection ratio and high output signal for vuv solar observation missions.