Abstract
An AlGaAs/GaAs micromachining technique that is compatible with laser diode fabrication process is described. AlGaAs structural layers and GaAs sacrificial layers are prepared by metal organic vapor phase epitaxy. Reactive dry etching with chlorine is used to fabricate high-aspect structures. Peroxide/ammonium hydroxide solution is used for selective etching of the sacrificial layer. Since the epitaxial layer has low stress, precise undeformed microstructures are obtained. Good compatibility with the LD process makes it possible to integrate microcantilever beams with LD's without degradation of LD characteristics. Microcantilever beams of AlGaAs are characterized by directly measuring stiffness and natural frequencies. A fracture test is also performed on the AlGaAs microcantilever beams. The average fracture stress of AlGaAs is found to be 1 GPa at 1% strain, which shows that the material is strong enough to support the micrometer scale structures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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