Abstract
High conductivity n-type ZnSe with ϱ = 0.01 ωcm and n = 2.4 × 10 18 cm −3 is obtained on (100) GaAs substrates by low pressure organometallic chemical vapor deposition. The 14 meV full width at half maximum of the 77 K photoluminescence near-band-edge emission shows a high quality of as-grown Al-doped ZnSe epilayers. With a suitable Al doping level, a strong photoluminescence intensity of near-band-edge emission is obtained. The behavior of near-band-edge emission and of self-activated emission related to the incorporation of aluminum are discussed in this paper.
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