Abstract
The compound semiconductor Hg0.8Cd0.2Te is commonly used in the production of infrared detection devices. In bulk growth, due to low Hg-Te bond strengths, high dislocation densities are often encountered. These dislocations, which are generated during the crystal growth process, significantly impair the performance of the semiconductor device. To best control this dislocation generation during growth, a knowledge of the active slip systems within the crystal lattice is desirable.Microhardness tests were performed on two distinct crystal surfaces of Bridgman grown Hg0.8Cd0.2Te crystals. Selected area electron channeling was used to determine trie crystallographic orientations of the surfaces that were tested. The slip lands that were introduced during the indentation process were observed using both the scanning electron and optical microscopes. From the data obtained, using elementary crystallographic techniques, the dominant slip systems active in Hg0.8Cd0.2Te were characterized.
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