Abstract
Abstract Due to the specific properties of substitutional donor impurities in GaA1As compounds, a deionization of the Si donor occurs when pressure is applied to a sample having an A content in the range 0.25–0.4. As this phenomenon has a high-pressure sensitivity, we propose a new kind of active pressure sensor based upon the use of two-dimensional AlGaAs/GaAs heterostructures (transistor TEGFET). In such a transistor, we show that pressure and gate voltage play a similar role. The transistor sensibility to the pressure depends on its working range. Our measurements show that the sensitivity in the saturation region, with VG (gate voltage) near to VT (threshold voltage), is larger than the sensitivity in the linear regime with VG greater than VT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
