Abstract
Various characterization methods are implemented to investigate the fundamental properties of a Cu2ZnSnS4 (CZTS) solar cell. The chemical distribution across the CZTS grain boundaries, the surface potential of CZTS absorber, the minority lifetime, the carrier collection length, diode ideality factor, dark saturation current, and series resistance are revealed in the characterization measurement. The short minority lifetime, high defect density, and large series resistance are confirmed and need to be addressed in the future work for further efficiency improvement.
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