Abstract
A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: JSTS:Journal of Semiconductor Technology and Science
Paper Title
Journal
Date
