Characterization of 1.2 kV 4H-SiC planar power MOSFETs

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We studied the effect of linear and interrupted linear cell topologies on the characteristics of 1.2 kV 4H-SiC planar power MOSFETs. These two cell designs both have high breakdown voltages and similar threshold voltages. But the on-resistance for the interrupted linear cell design is reduced by 12 % than that of the linear cell design. The measured reverse-transfer capacitances for the interrupted linear cell is 24 % larger compared to the linear cell at a drain bias of 0.1 V. A trade-off between the static and dynamic electrical characteristics of 1.2 kV SiC power MOSFETs with different cell topologies needs be adjusted in different applications.