Abstract
A simple, spectroscopic method is proposed for the characterization of metastable defects in semiconductors using modified photoisothermal capacitance transient spectroscopy (photo-ICTS). A photo-ICTS method using a weighting function is formularized for the conversion process between two defect states. The potential energy barrier separating two configurations of the metastable defect in Cu(In,Ga)Se2 thin films has been successfully analyzed along with a tentatively determined defect concentration.
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