Characterization and modeling of threshold voltage for organic and amorphous thin-film transistors

Abstract

This work portrays the study and analysis of several extraction techniques that are typically used to ascertain the threshold voltage of organic thin-film transistors (OTFTs) and oxide-based transistors. This study evaluates the effects of physical and electrical parameters such as channel length, doping concentration, temperature, and trap on the threshold voltage (VTH) of both p-type and n-type bottom gate top contact (BGTC) OTFTs using graphical method. The methods employed in the present work to extract the threshold voltage are determined in the linear region of operation and are derived from the drain current (IDS) and the gate-source voltage (VGS) transfer characteristics. To compare and analyze the threshold voltage, various techniques such as the linear extrapolation method (ELR), constant current method (CC), transconductance linear extrapolation method (GMLE), second derivative method (SD), ratio method (RM), Inverse Ratio method (VX), and transition method (TM) are employed in the present work. In addition to DC characterization, the capacitance-voltage (C-V) method was also used to extract and compare the threshold voltage using all the conventional techniques listed above. 2-D numerical simulations were performed to assess the validity and usefulness of the various methodologies used for the extraction of the threshold voltage.