Abstract
A semi-analytical model for Schottky diodes with ideality factors ( η) greater than 1.00 is presented with an experimental verification from n-type GaAs Schottky diodes ( η = 1.00–2.47 over T = 83–323 K). Adopting a correcting ideality factor in the distribution function, an accurate modeling of temperature-sensitive variations of current–voltage characteristics and accurate extraction of Schottky barriers are obtained with a modified Richardson constant. Temperature-dependent Schottky barriers ( ϕ bn = 0.928 V∣ 83 K –0.837 V∣ 323 K ), obtained from the semi-analytical model, are consistent with the variation of the energy bandgap with temperature which is known to be the main cause for the change of Schottky barriers.
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