Abstract
We present in this work the first characterization and modeling of low-frequency noise for SiGe-NPNs and SiGe-PNPs operating in the inverse mode from an advanced SiGe RF technology on SOI. Comparison is made between low-frequency noise in the forward and inverse modes. Impact of selective implanted collector (SIC) on inverse mode low-frequency noise is investigated. Finally, a methodology for low-frequency noise compact modeling in the inverse mode of operation is discussed.
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