Abstract
AbstractA model is proposed to understand the interactions between CMP pad asperities and the wafer. Pad asperity reduced modulus and height distribution are included in the model. Physical measurements of asperity properties are performed: asperity reduced modulus is measured by nanoindentation, and pad asperity height distribution is scanned by profilometry. The measured results are used in the model to predict the contact area percentage between the pad and wafer in the CMP process.
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