Abstract
A two-terminal analog synaptic device that precisely emulates biological synaptic features is expected to be a critical component for future hardware-based neuromorphic computing. Typical synaptic devices based on filamentary resistive switching face severe limitations on the implementation of concurrent inhibitory and excitatory synapses with low conductance and state fluctuation. For overcoming these limitations, we propose a Ta/TaOx/TiO2/Ti device with superior analog synaptic features. A physical simulation based on the homogeneous (nonfilamentary) barrier modulation induced by oxygen ion migration accurately reproduces various DC and AC evolutions of synaptic states, including the spike-timing-dependent plasticity and paired-pulse facilitation. Furthermore, a physics-based compact model for facilitating circuit-level design is proposed on the basis of the general definition of memristor devices. This comprehensive experimental and theoretical study of the promising electronic synapse can facilitate realizing large-scale neuromorphic systems.
Highlights
A two-terminal analog synaptic device that precisely emulates biological synaptic features is expected to be a critical component for future hardware-based neuromorphic computing
The resistance change in this device is determined by homogeneous barrier modulation (HBM) induced by oxygen ion migration [23]
We present a physical model of HBM that quantitatively describes both the steady-state (DC) and dynamic (AC) evolution of synaptic states
Summary
A two-terminal analog synaptic device that precisely emulates biological synaptic features is expected to be a critical component for future hardware-based neuromorphic computing. Typical synaptic devices based on filamentary resistive switching face severe limitations on the implementation of concurrent inhibitory and excitatory synapses with low conductance and state fluctuation. For overcoming these limitations, we propose a Ta/TaOx/TiO2/Ti device with superior analog synaptic features. A physics-based compact model for facilitating circuit-level design is proposed on the basis of the general definition of memristor devices This comprehensive experimental and theoretical study of the promising electronic synapse can facilitate realizing large-scale neuromorphic systems. Because of its nonfilamentary mechanism, this device overcomes the limitations of conventional filamentary synaptic devices and shows promising properties for neuromorphic computing, including concurrent inhibitory and excitatory synaptic plasticity, and low synaptic conductance with minimal fluctuation. We propose an analytical compact model based on the physical model of HBM and the general definition of memristor devices to facilitate circuit-level simulations in future large-scale neuromorphic system designs
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