Characterization and mobility analysis of MoO3-gated diamond MOSFET

Abstract

A MoO3-gated diamond metal–oxide–semiconductor field effect transistor (MOSFET) with a gate length of 40 µm was characterized. Analysis of the flat band voltage shift from the capacitance–voltage hysteresis shows quite high density of the fixed charge presents in the MoO3 layer (1.67 × 1012 cm−2), but the density of the traps brought by MoO3 layer is fairly low (1.35 × 1011 cm−2). The gate voltage dependence of the effective hole mobility was extracted and fitted by the empirical relation widely used in the silicon MOS channel. The resulting low-field mobility without vertical field degradation and the mobility degradation factor are 699 cm2/(V·s) and 1.13, respectively.